IXGH48N60C3D1 igbt equivalent, genx3 600v igbt.
z z z z z z
G
C
E
( TAB )
G = Gate E = Emitter
C
= Collector
TAB = Collector
Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Fast .
z
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = .
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